Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> crystals detected by photocurrent measurement
نویسندگان
چکیده
Acceptor impurity doping is recognized as a functional tool to extend the capabilities and applications of β-Ga2O3. The effect thermal annealing on photoexcited carriers was characterized by measuring photocurrent spectra nitrogen (N)-ion-implanted β-Ga2O3 crystals, where N found cause less crystal damage much lower diffusivity than Mg. intensity at 4.5–5.5 eV showed an increase with in external bias, attributed photo-generated non-equilibrium electrons holes. under positive bias distinct onset 3.0–3.5 owing optical transitions involving deep donor levels formed N-implantation. Spectrally integrated responsivity significant change temperature reflecting recovery crystallinity activation impurities. results also indicate formation additional nonradiative recombination centers due
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0031937